DMG2301U new product p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c -20v 80m ? @ v gs = 4.5v -2.7a 110m ? @ v gs = 2.5v -2.1a description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? backlighting ? power management functions ? dc-dc converters ? motor control features ? low on-resistance ? low input capacitance ? fast switching speed ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminals connections: see diagram below ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging DMG2301U-7 sot23 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. ? 2. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. marking information date code key year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 code w x y z a b c d e f month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view internal schematic top view pin configuration d g s g21 = product type marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) g21 ym sot23 source gate drain product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
DMG2301U new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 8 v continuous drain current (note 5) v gs = -4.5v steady state t a = +25c t a = +70c i d -2.7 -2.1 a continuous drain current (note 5) v gs = -2.5v steady state t a = +25c t a = +70c i d -2.1 -1.7 a pulsed drain current (note 6) i dm -27 a thermal characteristics characteristic symbol value unit power dissipation (note 5) p d 0.8 w thermal resistance, junction to ambient @t a = +25c (note 5) r ja 157 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current t j = +25 c i dss ? ? -1.0 a v ds = -16v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 8v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.45 ? -1.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? ? 80 m ? v gs = -4.5v, i d = -2.8a 110 v gs = -2.5v, i d = -2.0a forward transfer admittance |y fs | ? 10 ? s v ds = -5v, i d = -2.8a diode forward voltage v sd ? -0.75 -1.0 v v gs = 0v, i s = -1a dynamic characteristics (note 8) input capacitance c iss ? 608 ? pf v ds = -6v, v gs = 0v f = 1.0mhz output capacitance c oss ? 82 ? pf reverse transfer capacitance c rss ? 72 ? pf gate resistance r g ? 44.9 ? ? v gs = 0v, v ds = 0v, f = 1.0mhz total gate charge q g ? 6.5 ? nc v gs = -4.5v, v ds = -10v, i d = -3a gate-source charge q g s ? 0.9 ? nc gate-drain charge q g d ? 1.5 ? nc turn-on delay time t d ( on ) ? 12.5 40 ns v ds = -10v, v gs = -4.5v, r l = 10 , r g = 1.0 , i d = -1a turn-on rise time t r ? 10.3 30 ns turn-off delay time t d ( off ) ? 46.5 140 ns turn-off fall time t f ? 22.2 66 ns notes: 3. device mounted on fr-4 pcb with minimum recommended pad layout. 4. repetitive rating, pulse width limited by junction temperature.. 5. short duration pulse test used to minimize self-heating effect. 6. guaranteed by design. not subject to production testing. product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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